TOKYO, March 30 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20200329005003/en/ The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today. Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS VIII-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics[1] has also been improved[2] by optimizing device structure. As a result, the new products feature industry’s lowest[3] power dissipation. Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption. http://mrem.bernama.com/viewsm.php?idm=37061
0 Comments
Leave a Reply. |
Archives
April 2023
Categories |